Two dimensional bulk bands and surfaces resonances originated from (100) surfaces of III-V semiconductor compounds

TL;DR

This paper investigates the electronic band structure of the (100) surface of III-V zinc blende semiconductors, revealing new surface resonances and two-dimensional bulk states through tight binding and Green's function methods.

Contribution

It introduces a detailed analysis of surface-induced states in III-V semiconductors using combined tight binding and Green's function techniques.

Findings

Identification of surface resonances and 2D bulk states

Comparison with photoemission spectroscopy data

Extension of previous findings in CdTe(100) surfaces

Abstract

We have calculated the electronic band structure of the (100) surface of the III--V zinc blende semiconductor compounds, using the standard tight binding method and the surface Green's function matching method. We have found that the creation of the surface gives place to new states in the electronic structure: surface resonances and two dimensional bulk states. The two dimensional bulk states are of the same character of those reported recently in CdTe(100) [Phys. Rev. {\bf 50}, 1980 (1994)]. We analyze the states in the valence band region and compare with photoemission spectroscopy data.