Temperature and Pressure Effects on the Resistivity of the Manganese Oxides

TL;DR

This study analytically investigates how temperature and pressure influence the resistivity of manganese oxides using the Kondo lattice model, revealing resistivity drops at magnetic transitions and pressure effects.

Contribution

It provides an analytical approach to understanding resistivity behavior in manganese oxides under varying temperature and pressure conditions.

Findings

Resistivity drops at magnetic transition points.

Pressure effects vary below and above transition temperature.

Analytical density of states obtained for doped systems.

Abstract

The temperature and pressure effects on the resistivity of the manganese oxides are studied analytically via the Kondo lattice model with a strong Hund's coupling. We obtain analytically the single-particle density of states on the Bethe lattice in the large connectivity limit using the analytical variant of the dynamic Lanczos method. From the density of states for the doped system, we obtain resistivity and show resistivity drop when temperature crosses the magnetic transition point. We also demonstrate the effect of pressure both below and above the transition temperature.