Hall Resistivity in Ferromagnetic Manganese-Oxide Compounds

TL;DR

This paper investigates how the Hall resistivity in ferromagnetic manganese-oxide thin films varies with temperature and magnetic field, revealing peak behaviors near the Curie point and effects of magnetic field strength.

Contribution

It provides new insights into the temperature and magnetic field dependence of Hall resistivity and attributes abnormal Hall effects to spin-correlation fluctuation scattering.

Findings

Hall resistivity peaks near the Curie point in small magnetic fields

Strong magnetic fields shift the Hall resistivity peak to higher temperatures

Abnormal Hall resistivity is linked to spin-correlation fluctuation scattering

Abstract

Temperature-dependence and magnetic field-dependence of the Hall effect and the magnetic property in manganese-oxide thin films are studied. The spontaneous magnetization and the Hall resistivity are obtained for a various of magnetic fields over all the temperature. It is shown that the Hall resistivity in small magnetic field is to exhibit maximum near the Curie point, and strong magnetic field moves the position of the Hall resistivity peak to much high temperature and suppresses the peak value. The change of the Hall resistance in strong magnetic field may be larger than that of the diagonal ones. The abnormal Hall resistivity in the ferromagnetic manganese-oxide thin-films is attributed to the spin-correlation fluctuation scattering.