Voltage-biased quantum wire with impurities
Reinhold Egger, Hermann Grabert (University Freiburg, Germany)
TL;DR
This paper extends the bosonization method to include voltage bias in a quantum wire with impurities, analyzing how external reservoirs affect conductance and charge properties.
Contribution
It introduces a boundary condition for boson phase fields due to voltage bias, advancing the theoretical modeling of quantum wires with impurities under external voltage.
Findings
Boundary condition for boson phase fields derived
Analysis of channel conductance under bias
Insights into electroneutrality and charging effects
Abstract
The bosonization technique to describe correlated electrons in a one-dimensional quantum wire containing impurities is extended to include an applied voltage source. The external reservoirs are shown to lead to a boundary condition for the boson phase fields. We use the formalism to investigate the channel conductance, electroneutrality, and charging effects.
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