Single hole dispersion relation for the real CuO$_2$ plane
V. I. Belinicher, A. L. Chernyshev, and V. A. Shubin (Institute of, Semiconductor Physics, Novosibirsk, Russia)

TL;DR
This paper calculates the dispersion relation of a hole in the CuO$_2$ plane using a generalized $t$-$t^{\u2019}$-$J$ model, showing excellent agreement with experimental ARPES data, and discusses the physical justification of model parameters.
Contribution
It introduces a detailed calculation of the CuO$_2$ hole dispersion based on a generalized model derived from the three-band system, with parameter justification and comparison to experiments.
Findings
Calculated dispersion matches ARPES data.
Parameter ranges are physically justified.
Self-consistent Born approximation effectively models the system.
Abstract
Dispersion relation for the CuO hole is calculated basing on the {\it generalized} -- model, recently derived from the three-band one. Numerical ranges for all model parameters, , , , and three-site terms , have been strongly justified previously. Physical reasons for their values are also discussed. Self-consistent Born approximation is used for the calculation of the hole dispersion. An excellent agreement between calculated and one obtained from the angle-resolved photoemission experiments is found.
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