Beat-wave generation of plasmons in semiconductor plasmas
V.I. Berezhiani, S.M. Mahajan
TL;DR
This paper demonstrates that large amplitude plasma waves can be generated in semiconductor plasmas using laser beam beating, with potential to simulate relativistic plasma physics in narrow gap semiconductors.
Contribution
It introduces a method for beat-wave generation of plasmons in semiconductor plasmas, enabling simulation of relativistic plasma phenomena in solid-state systems.
Findings
Large amplitude plasma waves can be generated in semiconductor plasmas.
The process can simulate relativistic plasma physics in narrow gap semiconductors.
Potential applications in plasma physics research and semiconductor technology.
Abstract
It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap semiconductors (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas.
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