Magnetic Field-Induced Fano Profiles in the Absorption Coefficient of Semiconductors
V.I.Belitsky (1), A.Cantarero (1), S.T.Pavlov (2) ((1)University of, Valencia, Valencia,Spain, (2) P.N.Lebedev Physical Institute, Moscow, Russia)

TL;DR
This paper reports the discovery of Fano-like asymmetric resonance profiles in the magneto-absorption spectra of bulk semiconductors, attributed to quasi-one-dimensional electronic excitations and scattering effects.
Contribution
It introduces the observation of Fano profiles in magneto-absorption and explains their origin in the quasi-one-dimensional nature of hot electron-hole pairs.
Findings
Fano-like resonance profiles observed in magneto-absorption.
Renormalization of absorption profiles due to electronic excitation character.
Qualitative agreement with experimental data.
Abstract
A strongly asymmetric, Fano-like resonance profile has been found for magneto-absorption in the states of hot free electron-hole pairs scattered by defects in bulk semiconductors. The renormalization of the absorption profile, compared to that expected from the bare density of states in a high magnetic field, follows from a quasi-one-dimensional character of electronic excitations. The results are valid for absorption by the electronic states of large Landau quantum number where the Coulomb interaction should play a minor role. The resonance shape is in a good qualitattive agreement with experimental observations.
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Taxonomy
TopicsInduction Heating and Inverter Technology · Surface and Thin Film Phenomena · Magnetic Properties and Applications
