Multiband Electronic Raman Scattering in Bilayer Superconductors
T. P. Devereaux, A. Virosztek, and A. Zawadowski

TL;DR
This paper develops a theoretical framework for electronic Raman scattering in multiband bilayer superconductors, analyzing how interlayer interactions and screening affect the Raman response and providing insights into the symmetry of the superconducting gap.
Contribution
It introduces a formalism for multiband Raman scattering in bilayer superconductors, accounting for interlayer effects and screening, and applies it to real materials like La2:1:4 and Y1:2:3.
Findings
The response is mainly additive from individual bands with negligible mixing effects.
A d_{x^{2}-y^{2}}} gap symmetry best fits the experimental data.
Screening effects significantly influence the A_{1g} Raman response.
Abstract
A theory of electronic Raman scattering in the presence of several energy bands crossing the Fermi surface is developed. The contributions to the light scattering cross section are calculated for each band and it is shown that the cross section can be written in terms of the sum of the single band contributions and a mixing term which only contributes to the fully symmetric channels . Particular emphasis is placed on screening in bilayer superconductors. Since any charge fluctuation with long range character in real space is screened by the Coulomb interaction, the relevant fluctuations in a single layer case are induced between different parts of the Fermi surface. In a single band -wave superconductor the scattering at energy transfer twice the maximum gap is dominated by those parts of the Fermi surface where is largest. As a…
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