Realistic Calculations of Correlated Incompressible Electronic States in GaAs--Al_{x}Ga_{1-x}As Heterostructures and Quantum Wells
M. W. Ortalano (1), Song He (2), S. Das Sarma (1) ((1) Department of, Physics, University of Maryland, (2) AT&T Bell Laboratories, Murray Hill, NJ)

TL;DR
This study performs realistic finite-size calculations of fractional quantum Hall states in GaAs-AlGaAs heterostructures, accurately estimating pseudopotentials and excitation gaps, and compares results with experimental data showing excellent agreement.
Contribution
It introduces a self-consistent LDA approach to determine pseudopotentials for realistic quantum well systems, improving the accuracy of fractional quantum Hall state modeling.
Findings
Large overlap with Laughlin state at experimental densities
Calculated excitation gaps match experimental measurements
Realistic pseudopotentials improve modeling accuracy
Abstract
We perform an exact spherical geometry finite-size diagonalization calculation for the fractional quantum Hall ground state in three different experimentally relevant GaAs-Al_{x}Ga_{1-x}As systems: a wide parabolic quantum well, a narrow square quantum well, and a heterostructure. For each system we obtain the Coulomb pseudopotential parameters entering the exact diagonalization calculation by using the realistic subband wave function from a self-consistent electronic structure calculation within the local density approximation (LDA) for a range of electron densities. We compare our realistic LDA pseudopotential parameters with those from widely used simpler model approximations in order to estimate the accuracies of the latter. We also calculate the overlap between the exact numerical ground state and the analytical Laughlin state as well as the excitation gap as a function of density.…
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