Magnetic-field-enhanced outgoing excitonic resonance in multi-phonon Raman scattering from polar semiconductors
I.G.Lang (1), A.V.Prokhorov (1), M.Cardona (2), V.I.Belitsky (3),, A.Cantarero (3), S.T.Pavlov (1, 3) ((1) A.F.Ioffe Physico-Technical, Institute, St. Petersburg, Russia, (2) Max-Planck-Institute fuer FKF,, Stuttgart,Germany, (3) University of Valencia, Valencia, Spain)
TL;DR
This paper investigates how a magnetic field enhances multi-phonon Raman scattering in polar semiconductors by involving both free electron-hole pairs and discrete excitons, revealing a combined mechanism that boosts scattering efficiency and induces an outgoing excitonic resonance.
Contribution
It introduces a novel combined scattering mechanism involving free and discrete excitonic states that explains magnetic-field-enhanced Raman scattering and outgoing excitonic resonance.
Findings
Magnetic field significantly increases scattering efficiency.
The combined mechanism explains both enhancement and resonance phenomena.
Outgoing excitonic resonance is observed under high magnetic fields.
Abstract
A combined scattering mechanism involving the states of free electron-hole pairs (exciton continuum) and discrete excitons as intermediate states in the multi-phonon Raman scattering leads to (1) a strong increase of the scattering efficiency in the presence of a high magnetic field and to (2) an outgoing excitonic resonance: the two features are not compatible when only free pairs (leading to a strong increase of the scattering efficiency under the applied magnetic field) or discrete excitons (resulting in the outgoing resonance at the excitonic gap) are taken into account.
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