Hall Coefficient in the doped Mott Insulator

TL;DR

This paper calculates the Hall coefficient in a doped Mott insulator using a strong coupling Hubbard model, comparing high-frequency and zero-frequency results, and discusses implications for doped cuprates.

Contribution

It introduces a new iterated perturbation scheme to compute Hall coefficients in the Hubbard model and compares results with quantum Monte Carlo data.

Findings

High-frequency Hall constant $R_H^*$ agrees with QMC results.

Sign of $R_H$ is accurately reproduced by $R_H^*$.

Doping dependence of $R_H$ magnitude at large U is not captured.

Abstract

We compute the (zero frequency) Hall coefficient $R_H$, and the high frequency Hall constant $R_H^*$ for the strong coupling Hubbard model away from half-filling, in the $d=\infty$/ local approximation, using the new iterated perturbation scheme proposed by Kajueter and Kotliar. We find quantitative agreement of our $R_H^*$ with the QMC results obtained in two dimensions by Assaad and Imada [Phys. Rev. Lett. {\bf 74}, 3868 (1995)]. However while the {\it sign} of $R_H$ is quite accurately reproduced by $R_H^*$ the doping dependence of its magnitude at large U is not. We report results for the complete temperature $(T)$, doping $(x)$ and $U$ dependence of $R_H$ and $R_H^*$ and discuss their possible relevance to doped cuprates.