Boltzmann equation approach for transport in systems subject to microwave irradiation

TL;DR

This paper develops a Boltzmann equation framework to analyze microwave-induced transport phenomena in low-dimensional systems, predicting deviations from classical conductivity models that depend on microwave polarization and Fermi energy.

Contribution

It derives a general conductivity tensor expression under microwave irradiation and evaluates it for specific low-dimensional systems, highlighting observable deviations from classical results.

Findings

Deviations from Drude conductivity are predicted under microwave irradiation.

The deviations depend on microwave polarization and Fermi energy.

Explicit calculations for 2D Silicon layers show strong dependence on system parameters.

Abstract

We calculate the electronic transport properties of a system which is irradiated by a homogeneous microwave field. Within a Boltzmann equation approach, a general expression for the conductivity tensor is derived and evaluated for a quasi one-dimensional ballistic quantum wire and a two dimensional system with impurity scattering. For the latter, deviations from the Drude result are predicted for the conductivity tensor. This should be observable in systems where the scattering rate depends noticeably on the Fermi energy. The deviations are calculated explicitly for the case of a 2d Silicon layer, where they strongly depend on the microwave polarization and the Fermi energy.