Scanning Tunneling Microscopy and Tunneling Luminescence of the Surface of GaN Films Grown by Vapor Phase Epitaxy

TL;DR

This paper combines STM imaging and luminescence measurements on GaN films to explore correlations between surface structure and optical properties, advancing understanding of GaN surface phenomena.

Contribution

It introduces the first combined use of scanning tunneling microscopy and luminescence to study GaN surfaces, linking morphology with optical behavior.

Findings

STM images of GaN surfaces obtained

Luminescence observed from GaN films under STM

Potential correlation between surface features and luminescence

Abstract

We report scanning tunneling microscopy (STM) images of surfaces of GaN films and the observation of luminescence from those films induced by highly spatially localized injection of electrons or holes using STM. This combination of scanning tunneling luminescence (STL) with STM for GaN surfaces and the ability to observe both morphology and luminescence in GaN is the first step to investigate possible correlations between surface morphology and optical properties.