Coherent versus Incoherent Transport in Layered Doped Mott Insulators

TL;DR

This paper investigates the dimensional crossover in layered doped Mott insulators, explaining the observed resistivity behavior in overdoped lanthanum compounds using a gauge theory approach.

Contribution

It introduces a gauge theory framework to describe the dimensional cross-over in layered correlated metals, providing a theoretical explanation for experimental resistivity observations.

Findings

Identifies the dimensional cross-over from 2D to 3D in overdoped lanthanum compounds.

Derives the anomalous 3/2 exponent for resistivity temperature dependence.

Connects theoretical model with experimental data on layered doped Mott insulators.

Abstract

There exist strong experimental evidences for the dimensional cross-over from two to three dimensions as \lan compounds are overdoped. In this paper we describe the dimensional cross-over of the layered correlated metal in the gauge theory framework. In particular, we obtain the anomalous exponent 3/2 for the temperature dependence of resistivity observed in overdoped \lan.