Nonequilibrium Effects and Self Heating in Single Electron Coulomb Blockade Devices

TL;DR

This paper investigates nonequilibrium effects and self heating in single electron devices, analyzing how hot electrons relax and influence device behavior across different regimes, with theoretical calculations and comparisons to experiments.

Contribution

It introduces a comprehensive framework for understanding nonequilibrium and self heating effects in Coulomb blockade devices, including new scaling relations and energy dissipation calculations.

Findings

Identified three regimes: equilibrium, non-equilibrium, and self heating.

Derived the $T^5$ law coefficient for energy dissipation and compared with experiments.

Established scaling relations between electron temperature, frequency, and device size.

Abstract

We present a comprehensive investigation of nonequilibrium effects and self heating in single electron transfer devices based primarily on the Coulomb blockade effect. During an electron trapping process, a hot electron may be deposited in a quantum dot or metal island, with an extra energy usually on the order of the Coulomb charging energy, which is much higher than the temperature in typical experiments. The hot electron may relax through three channels: tunneling back and forth to the feeding lead (or island), emitting phonons, and exciting background electrons. Depending on the magnitudes of the rates in the latter two channels relative to the device operation frequency and to each other, the system may be in one of three different regimes: equilibrium, non-equilibrium, and self heating (partial equilibrium). In the quilibrium regime, a hot electron fully gives up its energy to phonons within a pump cycle. In the nonequilibrium regime, the relaxation is via tunneling with a distribution of characteristic rates; the approach to equilibrium goes like a power law of time (frequency) instead of an exponential. This channel is plagued completely in the continuum limit of the single electron levels. In the self heating regime, the hot electron thermalizes quickly with background electrons, whose temperature $T_e$ is elevated above the lattice temperature $T_l$. We have calculated the coefficient in the well known $T^5$ law of energy dissipation rate, and compared the results to experimental values for aluminum and copper islands and for a two dimensional semiconductor quantum dot. Moreover, we have obtained different scaling relations between the electron temperature and operation frequency and device size for various types of devices.