Theory of interstitial oxygen in silicon and germanium
Emilio Artacho, Felix Yndurain (U. Autonoma, Madrid)

TL;DR
This paper uses first-principles calculations to analyze the quantum delocalization and vibrational spectra of interstitial oxygen in silicon and germanium, revealing fundamental differences in their atomic behavior and spectral features.
Contribution
It provides a detailed theoretical comparison of interstitial oxygen in silicon and germanium, highlighting their distinct delocalization and vibrational properties based on total-energy calculations.
Findings
Interstitial oxygen is quantum delocalized in both materials.
Different delocalization mechanisms in silicon and germanium.
Identification of vibrational modes previously unobserved experimentally.
Abstract
The interstitial oxygen centers in silicon and germanium are reconsidered and compared in an analysis based on the first-principles total-energy determination of the potential-energy surface of the centers, and a calculation of their respective low energy excitations and infrared absorption spectra. The total-energy calculations reveal unambiguously that interstitial oxygen is quantum delocalized, the delocalization being essentially different in silicon and in germanium. Oxygen in silicon lies at the bond center site in a highly anharmonic potential well, whereas in germanium it is found to rotate almost freely around the original Ge-Ge bond it breaks. This different delocalization is the origin of the important differences in the low energy excitation spectra: there is a clear decoupling in rotation and vibration excitations in germanium, giving different energy scales (1 cm…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsSemiconductor materials and devices · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
