Density-dependent phonoriton states in highly excited semiconductors
Nguyen Hong Quang, Nguyen Minh Khue

TL;DR
This paper theoretically investigates how high exciton densities in photoexcited semiconductors influence phonoriton states, revealing their dispersion and damping are highly sensitive to exciton interactions and density.
Contribution
It introduces a theoretical framework accounting for exciton-exciton interactions and nonbosonic effects on phonoriton states in high-density regimes.
Findings
Phonoriton dispersion varies significantly with exciton density.
Damping of phonoritons is highly affected by exciton interactions.
High-density excitons alter phonoriton properties markedly.
Abstract
The dynamical aspects of the phonoriton state in highly-photoexcited semiconductors is studied theoretically. The effect of the exciton-exciton interaction and nonbosonic character of high-density excitons are taken into account. Using Green's function method and within the Random Phase Approximation it is shown that the phonoriton dispersion and damping are very sensitive to the exciton density, characterizing the excitation degree of semiconductors.
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