Density-Dependent Squeezing of Excitons in Highly Excited Semiconductors

TL;DR

This paper theoretically investigates how the squeezing of high-density excitons in semiconductors evolves over time, highlighting the dependence on exciton density and the effects of exciton interactions and phase-space filling.

Contribution

It introduces a theoretical model that incorporates exciton interactions and phase-space filling to analyze exciton squeezing in semiconductors.

Findings

Exciton squeezing decreases as exciton density increases.

Mutual exciton interactions influence the squeezing behavior.

Anharmonic exciton-photon interactions affect the state evolution.

Abstract

The time evolution from coherent states to squeezed states of high density excitons is studied theoretically based on the boson formalism and within the Random Phase Approximation. Both the mutual interaction between excitons and the anharmonic exciton-photon interaction due to phase-space filling of excitons are included in consideration. It is shown that the exciton squeezing depends strongly on the exciton density in semiconductors and becomes smaller with increasing the latter.