Chaos in resonant-tunneling superlattices
O.M. Bulashenko, L.L. Bonilla (Univ. Carlos III de Madrid)
TL;DR
This paper predicts the emergence of spatio-temporal chaos in n-doped semiconductor superlattices caused by resonant tunneling, with experimental observations of oscillations and chaos induced by external microwave forcing.
Contribution
It introduces the concept of chaos in resonant-tunneling superlattices and explains how external microwave signals can induce chaotic behavior.
Findings
Observation of undamped current oscillations
Prediction of chaos due to external forcing
Recycling of electric field domain walls
Abstract
Spatio-temporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under dc voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal.
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