The Nature of Thermopower in Bipolar Semiconductors
Yu. G. Gurevich, O. Yu. Titov (CINVESTAV--IPN Mexico), G. N., Logvinov (Teacher Training University, Ukraine), O. I. Lyubimov (Kharkov, State University, Ukraine)
TL;DR
This paper investigates the thermoemf in bipolar semiconductors, emphasizing the importance of nonequilibrium carrier distributions and contact conductivities in accurately calculating thermopower.
Contribution
It introduces a comprehensive calculation method for thermoemf that accounts for nonequilibrium Fermi levels and contact conductivities in bipolar semiconductors.
Findings
Nonequilibrium electron and hole distributions significantly affect thermoemf.
Contact conductivities contribute substantially to thermopower.
A new model improves understanding of thermoelectric behavior in bipolar semiconductors.
Abstract
The thermoemf in bipolar semiconductors is calculated. It is shown that it is necessary to take into account the nonequilibrium distribution of electron and hole concentrations (Fermi quasilevels of the electrons and holes). We find that electron and hole electric conductivities of contacts of semiconductor samples with connecting wires make a substantial contribution to thermoemf.
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