Tunneling through ultrasmall NIS junctions in terms of Andreev reflection: a nonlinear response approach
A. H\"adicke, W. Krech
TL;DR
This paper presents a systematic nonlinear response approach to analyze Andreev current in ultrasmall NIS junctions, deriving voltage-dependent conductance characteristics for different impedance environments.
Contribution
It introduces a novel nonlinear response method based on the quasiparticle tunneling Hamiltonian to study Andreev reflection in ultrasmall NIS junctions.
Findings
Derived voltage dependence of current and conductance
Analyzed effects of low- and high-impedance environments
Provided theoretical framework for Andreev reflection in NIS junctions
Abstract
The Andreev current through an ultrasmall NIS junction is calculated in a systematic way by means of a nonlinear response approach basing on the elementary Hamiltonian of quasiparticle tunneling. The voltage dependence of current and differential conductance as well as the Andreev conductance are derived for low- and high-impedance environments, respectively.
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