INTERLAYER COUPLING AND THE METAL-INSULATOR TRANSITION IN Pr-SUBSTITUTED Bi(2)Sr(2)CaCu(2)O(8+y)
C. Quitmann, B. Beschoten, R. J. Kelley, G. Guentherodt, M. Onellion

TL;DR
This study investigates how Pr substitution in Bi2Sr2CaCu2O8+y affects electronic structure and induces a metal-insulator transition, revealing interlayer coupling and localization effects through resonant photoemission analysis.
Contribution
It provides new insights into the electronic structure changes and interlayer coupling mechanisms responsible for the metal-insulator transition caused by Pr substitution.
Findings
No significant difference in Cu-density of states between superconducting and insulating samples.
Presence of a mobility gap due to carrier localization, not a bandgap.
Evidence of interlayer coupling between Pr and CuO2 plane states.
Abstract
Substitution of rare-earth ions for Ca in Bi2Sr2CaCu2O8+y is known to cause a metal-insulator transition. Using resonant photoemission we study how this chemical substitution affects the electronic structure of the material. For the partial Cu-density of states at E_F and in the region of the valence band we observe no significant difference between a pure superconducting sample and an insulating sample with 60% Pr for Ca. This suggests that the states responsible for superconductivity are predomi- nately O-states. The partial Pr-4f density of states was extracted utilizing the Super- Koster-Kronig Pr 4d-4f resonance. It consists of a single peak at 1.36eV binding energy. The peak shows a strongly assymetric Doniach-Sunjic line- shape indicating the presence of a continuum of electronic states with sharp cut off at E_F even in this insulating sample. This finding excludes a bandgap in…
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