Transport properties of nonlinear double-barrier structures
E. Diez, A. Sanchez, and F. Dominguez-Adame

TL;DR
This paper presents a solvable nonlinear double-barrier model for electron transport, revealing how different nonlinearities affect current-voltage characteristics and resonance phenomena, with implications for semiconductor and optical systems.
Contribution
It introduces a new solvable model incorporating nonlinear effects in double-barrier structures, analyzing various nonlinear coupling scenarios and their impact on transport properties.
Findings
Presence of sidebands and dual peaks in current-voltage curves with nonlinear barriers.
Voltage cutoffs and linear-like behavior depending on the nonlinear coefficient in the well.
Effects of combined nonlinearities on transport phenomena are systematically characterized.
Abstract
We introduce a solvable model of a nonlinear double-barrier structure, described by a generalized effective-mass equation with a nonlinear coupling term. This model is interesting in its own right for possible new applications, as well as to help understand the combined effect of spatial correlations and nonlinearity on disordered systems. Although we specifically discuss the application of the model to electron transport in semiconductor devices, our results apply to other contexts, such as nonlinear optical phenomena. Our model consists of finite width barriers and nonlinearities are dealt with separately in the barriers and in the well, both with and without applied electric fields. We study a wide range of nonlinearity coupling values. When the nonlinear term is only present in the barriers, a sideband is observed in addition to the main resonance and, as a consequence, the…
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Spectroscopy and Quantum Chemical Studies
