Single layer/bilayer transition of electron systems in AlGaAs/GaAs/AlGaAs quantum wells subject to in-plane magnetic fields
L. Smrcka, T. Jungwirth

TL;DR
This paper theoretically investigates the transition from single to bilayer electron systems in AlGaAs/GaAs/AlGaAs quantum wells under in-plane magnetic fields, revealing new phenomena like energy dispersion separability and effects on the density of states.
Contribution
It introduces a detailed analysis of magnetic field-induced transitions and energy spectrum separability in double-heterojunction quantum wells, expanding understanding of electron behavior in these structures.
Findings
Observation of energy spectrum separability in bilayer systems
Magnetic field effects on effective interlayer distance
Potential for easier detection of van Hove singularities
Abstract
Equilibrium properties of electrons in double-heterojunction AlGaAs/GaAs\AlGaAs structures are investigated theoretically, using a full self-consistent numerical method. The transition from single to bilayer electron systems is discussed for the case of double-junction structures with varying distance between interfaces. In strong in-plane magnetic fields we observed the same type of transition accompanied by large effects on the energy spectra. A new fenomenon in bilayer systems - separability of the energy dispersion curve in parts corresponding to electrons either in first or second layer is analyzed in detail. The magnetic field induced variation in the effective distance between electron layers is compared to the constant layers separation in standard double-well structures. Due to relatively small and soft electrostatic barrier between interfaces we expect the van Hove singularity…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Advanced Chemical Physics Studies
