Electron Depletion Due to Bias of a T-Shaped Field-Effect Transistor

TL;DR

This paper models a T-shaped field-effect transistor made of 2D electron gases, analyzing electron depletion effects due to bias and comparing numerical results with experiments and analytical calculations.

Contribution

It introduces a numerical model for electron distribution in a T-shaped FET, incorporating depletion effects and validating it against experimental data.

Findings

Numerical model accurately predicts electron distribution.

Depletion effects significantly influence device behavior.

Model aligns well with experimental and analytical results.

Abstract

A T-shaped field-effect transistor, made out of a pair of two-dimensional electron gases, is modeled and studied. A simple numerical model is developed to study the electron distribution vs. applied gate voltage for different gate lengths. The model is then improved to account for depletion and the width of the two-dimensional electron gases. The results are then compared to the experimental ones and to some approximate analytical calculations and are found to be in good agreement with them.