Nonequilibrium total dielectric function approach to the electron Boltzmann equation for inelastic scattering in doped polar semiconductors
B.A. Sanborn

TL;DR
This paper introduces a general method to derive the inelastic collision term in the electron Boltzmann equation for doped polar semiconductors, incorporating nonequilibrium dielectric functions and hybrid phonon modes.
Contribution
The paper presents a novel approach using nonequilibrium total dielectric functions to accurately model inelastic scattering in doped polar semiconductors.
Findings
Derived the inelastic scattering rate in terms of nonequilibrium dielectric functions.
Separated electron-electron and electron-phonon interactions within the random-phase approximation.
Showed the impact of phonon self-energy on optical phonon dispersion and collision terms.
Abstract
This paper describes a simple and general method for deriving the inelastic collision term in the electron Boltzmann equation for scattering from a coupled electron-phonon system, and applies the method to the case of doped polar semiconductors. In the Born approximation, the inelastic differential scattering rate can be expressed in terms of the nonequilibrium total dynamic dielectric function, which includes both electronic and lattice contributions. Within the random-phase approximation separates into two components: an electron-electron interaction containing the nonequilibrium distribution function for excitations of the electron gas, and a Fr\"{o}hlich interaction including the phonon distribution function and self-energy due to polarization of the electrons. Each of these two interactions is screened by only the electronic part of the total dielectric…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
