Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields

TL;DR

This paper investigates how the capacitance of gated GaAs/AlGaAs heterostructures varies with gate voltage and in-plane magnetic fields, highlighting quantum effects and comparing numerical models with experimental data.

Contribution

It provides a comprehensive analysis of capacitance behavior under magnetic fields, including quantum step phenomena, with self-consistent calculations validated against experiments.

Findings

Capacitance shows nonlinear dependence on gate voltage and magnetic field.

Quantum steps in capacitance correspond to population of higher 2D subbands.

Numerical calculations agree well with experimental results.

Abstract

A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher 2D gas subbands. The results of full self-consistent numerical calculations are compared to recent experimental data.