Bound states of 3He in 3He-4He mixture films

TL;DR

This paper investigates the formation of 3He dimers in 3He-4He mixture films, analyzing how substrate interactions influence binding energies of 3He impurity states.

Contribution

It introduces a schematic 3He-3He interaction potential and calculates dimer binding energies across different substrates, highlighting substrate effects on impurity states.

Findings

3He impurity states near substrates have the highest binding energies

Dimer formation depends on substrate properties and impurity localization

Calculated binding energies vary with substrate type and impurity positioning

Abstract

3He atoms dissolved in superfluid 4He may form dimers (3He)2 in two-dimensional geometries. We study dimer formation in films of dilute 3He-4He mixture. After designing a schematic 3He-3He interaction potential we calculate the dimer binding energy for various substrates. It is shown that 3He impurity states localized near the substrate give rise to the largest magnitudes of the binding energies.