Green Function Approach to Interface States in Band Inverted Junctions

TL;DR

This paper introduces a Green function method to analyze interface states in band-inverted semiconductor heterostructures, allowing for straightforward inclusion of external fields and providing insights into their electronic properties.

Contribution

It presents a novel Green function approach combined with point interaction potentials for studying interface states in band-inverted junctions.

Findings

Effective calculation of interface states in band-inverted heterostructures.

Method allows easy inclusion of external fields.

Provides a new framework for analyzing electronic interface phenomena.

Abstract

We calculate interface states in semiconductor heterostructures with band inversion using a Green function approach and the so called {\em point interaction potentials}. Effects of external fields can be included in a straightforward fashion.