Electronic Structure of Fibonacci Si Delta-Doped Gaas

TL;DR

This paper investigates the electronic structure of a Fibonacci superlattice created by Si delta-doping in GaAs, revealing a self-similar energy spectrum and analyzing transport properties related to electron localization.

Contribution

It introduces a novel Fibonacci superlattice model with delta-doped layers and analyzes its electronic spectrum and transport properties using the Thomas-Fermi and effective-mass approaches.

Findings

Self-similar energy spectrum observed

Transport properties linked to electron localization

Fibonacci sequence influences electronic band structure

Abstract

We study the electronic structure of a new type of Fibonacci superlattice based on Si $\delta$-doped GaAs. Assuming that $\delta$-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to $\delta$-doping is obtained by means of the Thomas-Fermi approach. The resulting energy spectrum is then found by solving the corresponding effective-mass wave equation. We find that a self-similar spectrum can be seen in the band structure. Electronic transport properties of samples are also discussed and related to the degree of spatial localization of electronic envelope-functions.