The effects of the carrier interaction and electric fields on subband structures of selectively--doped semiconductor quantum wells

TL;DR

This study examines how electric fields and carrier interactions influence the subband structures of symmetrically-doped semiconductor quantum wells, revealing specific dependencies of electron and hole subband energies on these parameters.

Contribution

It provides a detailed analysis of the combined effects of electric fields and carrier interactions on quantum well subband structures using a local density functional approach.

Findings

Electron subband energy decreases with increasing electric field.

Surface carrier density increases electron subband energy.

Energy separation of hole subbands increases with carrier density and field.

Abstract

We investigate the ground--state electronic properties of the symmetrically-- doped semiconductor quantum well in the presence of a homogeneous electric field. In this paper we examined the effect of the electric field and carrier interaction on the subband structure as a function of the field strength and carrier concentration. The many--body effects are evaluated using a local density functional exchange--correlation potential. We find that the electron subband energy is reduced as the magnitude of the electric field is increased, but it is increased as the surface carrier density is increased. However, the separation of the electron subband energies is reduced for the increase in both the electric field and surface carrier density. On the other hand, the energy separation of the hole subbands is increased as the carrier density and field strength are increased. Effect of the exchange--correlation potential on the subband structure is found negligibly small in this calculation. The subband energies are reduced slightly, increasing their separations little in the presence of the local exchange--correlation potential.