Magnetoresistance of a 2-dimensional electron gas in a random magnetic field
Anders Smith, Rafael Taboryski, Luise Theil Hansen, Claus B. Sorensen,, Per Hedegard, P. E. Lindelof (Niels Bohr Institute, Copenhagen)
TL;DR
This study investigates how a 2D electron gas's electrical resistance changes when exposed to a random magnetic field created by superconducting grains, with results supported by semiclassical theory.
Contribution
It introduces experimental measurements of magnetoresistance in a 2DEG with a randomly expelled magnetic field and provides a theoretical explanation using the semiclassical Boltzmann equation.
Findings
Magnetoresistance is significantly affected by the random magnetic field.
Experimental results align well with semiclassical theoretical predictions.
The expulsion of magnetic field regions influences electron transport properties.
Abstract
We report magnetoresistance measurements on a two-dimensional electron gas (2DEG) made from a high mobility GaAs/AlGaAs heterostructure, where the externally applied magnetic field was expelled from regions of the semiconductor by means of superconducting lead grains randomly distributed on the surface of the sample. A theoretical explanation in excellent agreement with the experiment is given within the framework of the semiclassical Boltzmann equation.
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