Coherent and sequential photoassisted tunneling through a semiconductor double barrier structure
J. Inarrea, G. Platero (Instituto de Ciencia de Materiales (CSIC) and, Departamento de Fisica de la Materia Condensada C-III, Universidad Autonoma,, Cantoblanco, 28049 Madrid, Spain), C. Tejedor (Departamento de Fisica de, la Materia Condensada, Universidad Autonoma de Madrid

TL;DR
This paper investigates coherent and sequential photoassisted tunneling in a semiconductor double barrier structure, using theoretical models to match experimental results and exploring magnetic field effects.
Contribution
It introduces a theoretical framework combining canonical transformation and perturbation theory to analyze light-assisted tunneling in double barrier structures.
Findings
Good agreement between calculated and experimental transmission coefficients.
Identification of light's role in enhancing tunneling processes.
Analysis of magnetic field effects on tunneling coherence.
Abstract
We have studied the problem of coherent and sequential tunneling through a double barrier structure, assisted by light considered to be present All over the structure, i,e emitter, well and collector as in the experimental evidence. By means of a canonical transformation and in the framework of the time dependent perturbation theory, we have calculated the transmission coefficient and the electronic resonant current. Our calculations have been compared with experimental results turning out to be in good agreement. Also the effect on the coherent tunneling of a magnetic field parallel to the current in the presence of light, has been considered.
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