Step edge barriers on GaAs(001)

TL;DR

This study examines the growth kinetics of vicinal GaAs(001) surfaces, revealing that including step edge barriers and short-range incorporation processes in models is essential for accurately matching experimental observations.

Contribution

It introduces a detailed comparison between experimental RHEED data and simulations that incorporate step edge barriers and incorporation processes for GaAs(001) growth.

Findings

Inclusion of step edge barriers improves model accuracy.

Short-range incorporation is crucial for matching experimental data.

Simulations align with measurements during growth and post-growth.

Abstract

We investigate the growth kinetics on vicinal GaAs(001) surfaces by making detailed comparisons between reflection high--energy electron--diffraction specular intensity measured near in--phase diffraction conditions and the surface step density obtained from simulations of a solid--on--solid model. Only by including a barrier to interlayer transport and a short--range incorporation process of freshly--deposited atoms can the simulations be brought into agreement with the measurements both during growth and during post--growth equilibration of the surface.