Capacitance of a Double-Heterojunction GaAs/AlGaAs Structure Subjected to In-Plane Magnetic Fields: Results of Self-Consistent Calculations

TL;DR

This paper presents self-consistent calculations of the capacitance in a GaAs/AlGaAs double-heterojunction structure under in-plane magnetic fields, revealing a non-monotonic behavior due to charge redistribution effects.

Contribution

It introduces a detailed self-consistent computational model to analyze how in-plane magnetic fields affect the capacitance of double-heterojunction structures.

Findings

Capacitance initially increases with magnetic field strength.

Capacitance reaches a maximum and then decreases at higher fields.

High field limit of capacitance is less than the zero-field value.

Abstract

The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped AlGaAs barriers is calculated self-consistently as a function of intensity of the in-plane magnetic field. With increasing field intensity the capacitance initially increases and after reaching a maximum decreases toward a high field limit which is less than its zero field value. This behaviour is attributed to 'breathing', or charge redistribution, of the 2D electron gas at individual heterojunctions due to a combination of the confining potential and the magnetic field.