Resonant Tunneling and the Pauli Principle
S. A. Gurvitz, H. J. Lipkin, and Ya. S. Prager

TL;DR
This paper introduces a modified optical Bloch equation approach to study how the Pauli principle affects resonant tunneling in semiconductor heterostructures, revealing significant deviations from traditional one-electron models.
Contribution
It presents a novel method that explicitly incorporates electron statistics into the analysis of resonant tunneling, accounting for inelastic scattering effects.
Findings
Predicted notable deviations from one-electron models.
Demonstrated the influence of the Pauli principle on tunneling currents.
Provided a new framework for analyzing electron interactions in heterostructures.
Abstract
A new method based on modified optical Bloch equations is proposed for studying resonant tunneling in semiconductor heterostructures. The method manifestly takes account of electrons' statistics, which enables to investigate the influence of the Pauli principle on resonant tunneling in presence of inelastic scattering. Being applied to evaluation of the resonant current in semiconductor heterostructures, our approach predicts considerable deviations from the one-electron picture.
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Taxonomy
TopicsSemiconductor materials and devices · Surface and Thin Film Phenomena · Quantum and electron transport phenomena
