Self-Consistent Electron Subbands of Gaas/Algaas Heterostructure in Magnetic Fields Parallel to the Interface

TL;DR

This paper theoretically investigates how strong magnetic fields parallel to a GaAs/AlGaAs interface affect the subband structure of a two-dimensional electron system, including subband depletion and self-consistent potential calculations.

Contribution

It presents a self-consistent theoretical model incorporating electron-electron interactions to analyze magnetic field effects on subband structures in heterostructures.

Findings

Magnetic fields induce depletion of the second subband.

Self-consistent potential and dispersion relations are calculated.

Electron-electron interactions are included in the model.

Abstract

The effect of strong magnetic fields parallel to GaAs/AlGaAs interface on the subband structure of a 2D electron layer is ivestigated theoretically. The system with two levels occupied in zero magnetic field is considered and the magnetic field induced depletion of the second subband is studied. The confining potential and the electron dispersion relations are calculated self-consistently, the electron- electron interaction is taken into account in the Hartree approximation.