Scaling theory of the Mott-Hubbard metal-insulator transition in one dimension

TL;DR

This paper provides an exact analysis of the charge stiffness and correlation length near the Mott-Hubbard transition in a one-dimensional Hubbard model, revealing universal scaling behavior and charge transport characteristics.

Contribution

It derives an exact asymptotic form for charge stiffness and correlation length, and maps holons to weakly interacting fermions for arbitrary interaction strength.

Findings

Exact asymptotic form of charge stiffness at large system size

Universal hyperscaling form of charge stiffness near critical point

Hole-like transport near the metal-insulator transition

Abstract

We use the Bethe ansatz equations to calculate the charge stiffness $D_{\rm c} = (L/2) d^2 E_0/d\Phi_{\rm c}^2|_{\Phi_{\rm c}=0}$ of the one-dimensional repulsive-interaction Hubbard model for electron densities close to the Mott insulating value of one electron per site ($n=1$), where $E_0$ is the ground state energy, $L$ is the circumference of the system (assumed to have periodic boundary conditions), and $(\hbar c/e)\Phi_{\rm c}$ is the magnetic flux enclosed. We obtain an exact result for the asymptotic form of $D_{\rm c}(L)$ as $L\to \infty$ at $n=1$, which defines and yields an analytic expression for the correlation length $\xi$ in the Mott insulating phase of the model as a function of the on-site repulsion $U$. In the vicinity of the zero temperature critical point U=0, $n=1$, we show that the charge stiffness has the hyperscaling form $D_{\rm c}(n,L,U)=Y_+(\xi \delta, \xi/L)$, where $\delta =|1-n|$ and $Y_+$ is a universal scaling function which we calculate. The physical significance of $\xi$ in the metallic phase of the model is that it defines the characteristic size of the charge-carrying solitons, or {\em holons}. We construct an explicit mapping for arbitrary $U$ and $\xi \delta \ll 1$ of the holons onto weakly interacting spinless fermions, and use this mapping to obtain an asymptotically exact expression for the low temperature thermopower near the metal-insulator transition, which is a generalization to arbitrary $U$ of a result previously obtained using a weak- coupling approximation, and implies hole-like transport for $0<1-n\ll\xi^{-1}$.