Comparison between experiment and calculated band structures for DyN and SmN
A.R.H. Preston, S. Granville, D.H. Housden, B. Ludbrook, B.J. Ruck,, H.J. Trodahl, A. Bittar, G.V.M. Williams, J.E. Downes, A. DeMasi, Y. Zhang,, K.E. Smith, W.R.L. Lambrecht

TL;DR
This study compares experimental and theoretical electronic band structures of DyN and SmN, revealing resistivity anomalies linked to magnetic transitions and validating calculations with some discrepancies.
Contribution
It provides a detailed comparison between experimental data and LSDA+U calculations for DyN and SmN, highlighting the agreement and differences in their electronic structures.
Findings
Both DyN and SmN are semiconductors with resistivity anomalies at magnetic transitions.
X-ray measurements agree well with calculations, except SmN's predicted zero band gap.
Experimental and theoretical results enhance understanding of rare-earth nitrides' electronic properties.
Abstract
We investigate the electronic band structure of two of the rare-earth nitrides, DyN and SmN. Resistivity measurements imply that both materials have a semiconducting ground state, and both show resistivity anomalies coinciding with the magnetic transition, despite the different magnetic states in DyN and SmN. X-ray absorption and emission measurements are in excellent agreement with LSDA+U calculations, although for SmN the calculations predict a zero band gap.
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