Simple-layered high mobility field effect heterostructured two-dimensional electron device

TL;DR

This paper introduces a simple, easily fabricated 2D electron heterostructure device with high mobility, adjustable electron densities, and potential for studying electron correlations and practical high-electron-mobility transistors.

Contribution

It presents a novel simple-layered heterostructure device design that achieves high mobility without dopant layers, simplifying fabrication and enabling new research and applications.

Findings

Electron mobilities exceed 8x10^6 cm^2/V-sec at high densities

Device demonstrates adjustable electron densities

Simplified fabrication process without dopant layers

Abstract

We present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple metallic overlapping gate, obviating dopant layers. The resultant devices demonstrate adjustable electron densities and mobilities larger than 8x106 cm2/V-sec at the highest densities of 2.4x1011/cm2. This device type provides an experimental avenue for studying electron correlations and may answer demands for routine fabrication of practical HEMTs.