Self-consistent analytical solution of a problem of charge-carrier injection at a conductor/insulator interface

TL;DR

This paper develops a self-consistent analytical model for charge-carrier injection at conductor/insulator interfaces, incorporating space charge effects and electrostatic potential feedback, providing insights into injection-limited and bulk-limited transport regimes.

Contribution

It introduces a novel, exactly solvable model that accounts for space charge effects and self-consistency in charge injection, improving upon single-electron models.

Findings

Derived closed-form electric field distributions.

Revealed the crossover between injection-limited and bulk-limited regimes.

Validated the model with a simplified ITO/organic semiconductor system.

Abstract

We present a closed description of the charge carrier injection process from a conductor into an insulator. Common injection models are based on single electron descriptions, being problematic especially once the amount of charge-carriers injected is large. Accordingly, we developed a model, which incorporates space charge effects in the description of the injection process. The challenge of this task is the problem of self-consistency. The amount of charge-carriers injected per unit time strongly depends on the energy barrier emerging at the contact, while at the same time the electrostatic potential generated by the injected charge- carriers modifies the height of this injection barrier itself. In our model, self-consistency is obtained by assuming continuity of the electric displacement and the electrochemical potential all over the conductor/insulator system. The conductor and the insulator are properly taken into account by means of their respective density of state distributions. The electric field distributions are obtained in a closed analytical form and the resulting current-voltage characteristics show that the theory embraces injection-limited as well as bulk-limited charge-carrier transport. Analytical approximations of these limits are given, revealing physical mechanisms responsible for the particular current-voltage behavior. In addition, the model exhibits the crossover between the two limiting cases and determines the validity of respective approximations. The consequences resulting from our exactly solvable model are discussed on the basis of a simplified indium tin oxide/organic semiconductor system.