Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect

TL;DR

This study investigates the quantum Hall effect on cleaved InSb surfaces, revealing how surface treatment and annealing influence electron density, mobility, and quantum phenomena at low magnetic fields.

Contribution

It demonstrates the observation of quantum Hall effect at low magnetic fields on InSb surfaces and highlights the impact of surface morphology and annealing on electron transport properties.

Findings

Quantum Hall effect observed at ~2 T

Surface electron density depends on Ag coverage

Annealing temperature affects electron mobility

Abstract

We have performed low-temperature in-plane magnetotransport measurements on two-dimensional electron systems induced by deposition of Ag at {\it in situ} cleaved surfaces of {\it p}-type InSb. The quantum Hall effect was observed even at low magnetic fields around 2 T. The surface electron density and the electron mobility exhibit strong dependence on the Ag-coverage and the annealing temperature in the range of 15-40 K. The annealing effect suggests that the surface morphology strongly affects the properties of the two-dimensional electron systems.