Low temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates
Guy Brammertz, Yves Mols, Stefan Degroote, Vasyl Motsnyi, Maarten, Leys, Gustaaf Borghs, and Matty Caymax
TL;DR
This study investigates the optical properties of thin GaAs films grown on Ge substrates using low-temperature photoluminescence spectroscopy, revealing insights into their electronic and structural characteristics.
Contribution
It provides detailed PL analysis of GaAs films with varying thicknesses and doping levels grown by OMVPE on Ge substrates, which is a novel comprehensive characterization.
Findings
PL spectra vary with film thickness and doping levels
Identification of defect-related emission features
Insights into strain and impurity effects in GaAs films
Abstract
Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substrates and extensively analyzed by low-temperature photoluminescence (PL) spectroscopy.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Photonic and Optical Devices · Semiconductor materials and devices