In Situ Treatment of a Scanning Gate Microscopy Tip

TL;DR

This paper presents an in situ high-field treatment method for scanning gate microscopy tips, improving the tip-induced potential and measurement accuracy in electronic transport studies of nanostructures.

Contribution

The study introduces a novel in situ high-field treatment technique to enhance the quality of scanning gate microscopy tips, addressing contamination issues affecting potential measurements.

Findings

Improved tip-induced potential after treatment

Enhanced measurement accuracy in quantum dot experiments

Reduction of contamination effects on the tip

Abstract

In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and interpretation of the measurements. Contaminations picked up during topography scans may significantly alter this potential. We present an in situ high-field treatment of the tip that improves the tip-induced potential. A quantum dot was used to measure the tip-induced potential.