Resolution in Focused Electron- and Ion-Beam Induced Chemical Vapor Deposition

TL;DR

This paper analyzes the physical processes affecting resolution in focused electron- and ion-beam chemical vapor deposition, deriving scaling laws and supporting experimental results to understand how molecular dynamics influence deposit resolution.

Contribution

It introduces a novel adsorption rate model to quantify how molecule depletion and replenishment determine resolution, with new scaling laws relating physical parameters to deposit quality.

Findings

Resolution depends on molecule dissociation, diffusion, adsorption, and desorption.

Scaling laws link physical parameters to deposition resolution.

Experimental validation with copper precursor on silicon.

Abstract

The key physical processes governing resolution of focused electron-beam and ion-beam-assisted chemical vapor deposition are analyzed via an adsorption rate model. We quantify for the first time how the balance of molecule depletion and replenishment determines the resolution inside the locally irradiated area. Scaling laws are derived relating the resolution of the deposits to molecule dissociation, surface diffusion, adsorption, and desorption. Supporting results from deposition experiments with a copper metalorganic precursor gas on a silicon substrate are presented and discussed.