Spin qubits with electrically gated polyoxometalate molecules

TL;DR

This paper proposes using electrically gated polyoxometalate molecules as spin qubits, enabling scalable quantum computing with chemical units that can be electrically controlled for quantum gate operations.

Contribution

It introduces a novel molecular system, polyoxometalate [PMo12O40(VO)2], for spin qubits with electrical gating capabilities, addressing scalability issues in quantum computing.

Findings

Electrically controlled two-qubit gates are feasible with the proposed molecule.

Charge state manipulation enables qubit readout and gate operations.

Molecular approach offers a scalable alternative to semiconductor quantum dots.

Abstract

Spin qubits offer one of the most promising routes to the implementation of quantum computers. Very recent results in semiconductor quantum dots show that electrically-controlled gating schemes are particularly well-suited for the realization of a universal set of quantum logical gates. Scalability to a larger number of qubits, however, remains an issue for such semiconductor quantum dots. In contrast, a chemical bottom-up approach allows one to produce identical units in which localized spins represent the qubits. Molecular magnetism has produced a wide range of systems with tailored properties, but molecules permitting electrical gating have been lacking. Here we propose to use the polyoxometalate [PMo12O40(VO)2]q-, where two localized spins-1/2 can be coupled through the electrons of the central core. Via electrical manipulation of the molecular redox potential, the charge of the core can be changed. With this setup, two-qubit gates and qubit readout can be implemented.