Efficient current-induced domain-wall displacement SrRuO3

TL;DR

This paper demonstrates efficient current-induced displacement of ferromagnetic domain walls in SrRuO3 films, achieving control at relatively low current densities, with potential implications for magnetic memory devices.

Contribution

It shows for the first time that SrRuO3 can be used for efficient current-driven domain-wall motion at zero magnetic field.

Findings

Domain walls displaced at current densities of 10^9 - 10^10 A/m^2.

Displacement direction reverses with current reversal.

High efficiency linked to narrow domain walls (~3 nm).

Abstract

We demonstrate current-induced displacement of ferromagnetic domain walls in sub-micrometer fabricated patterns of SrRuO3 films. The displacement, monitored by measuring the extraordinary Hall effect, is induced at zero applied magnetic field and its direction is reversed when the current is reversed. We find that current density in the range of 10^9 - 10^10 A/m^2 is sufficient for domain-wall displacement when the depinning field varies between 50 to 500 Oe. These results indicate relatively high efficiency of the current in displacing domain walls which we believe is related to the narrow width ~3 nm of domain walls in this compound.