Transit-Time Spin Field-Effect-Transistor

TL;DR

This paper introduces a four-terminal spin FET design utilizing hot-electron transport and transit-time control in silicon, offering an alternative to Rashba-based spin manipulation.

Contribution

It presents a novel device concept for a spin field-effect-transistor in silicon using electrostatic transit-time control instead of spin-orbit interaction.

Findings

Proposed a four-terminal device with hot-electron spin injection and detection.

Demonstrated the feasibility of transit-time control in silicon.

Provided analysis of device operation and potential advantages.

Abstract

We propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary semiconductor. This provides the possibility of realizing a spin field-effect-transistor in Si, using electrostatic transit-time control in a perpendicular magnetic field, rather than Rashba effect with spin-orbit interaction.