A Graphene Field-Effect Device
M.C. Lemme (1), T.J. Echtermeyer (1), M. Baus (2), H. Kurz (1,2) ((1), Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Aachen, Germany,(2), Institute of Semiconductor Electronics, RWTH Aachen University, Germany)
TL;DR
This paper investigates a top-gated graphene field-effect device fabricated with CMOS-compatible processes, demonstrating carrier mobilities surpassing those of traditional silicon-based MOSFETs, highlighting graphene's potential for high-performance electronics.
Contribution
It introduces a CMOS-compatible fabrication process for graphene FEDs and reports carrier mobilities higher than silicon MOSFETs, showcasing graphene's advantages.
Findings
Carrier mobilities exceed silicon MOSFETs.
CMOS-compatible process flow used for fabrication.
Potential for high-performance graphene-based electronics.
Abstract
In this letter, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.
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