Transverse transport in graphite

TL;DR

This paper investigates how inelastic scattering affects electron tunnelling along the c-axis in graphite, a layered material with anisotropic electronic properties, to better understand its transport behavior for device applications.

Contribution

It introduces a study of inelastic scattering effects on interlayer electron tunnelling in graphite, highlighting the role of electron-electron interactions.

Findings

Inelastic scattering significantly modifies tunnelling processes.

Electron-electron interactions influence transport anisotropy.

Results inform the design of graphitic electronic devices.

Abstract

Graphite is a layered material showing a strong anisotropy. Among the unconventional properties reported by experiments, the electronic transport along the c-axis, which has direct implications in order to build graphitic devices, remains a controversial topic. We study the influence of inelastic scattering on the electron tunnelling between layers. In the presence of electron electron interactions, tunnelling processes are modified by inelastic scattering events.